发明名称 TOP PLATE FOR PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a plasma processing apparatus in which plasma density can be made uniform in the horizontal direction of a processing space, and to provide a top plate for use therein.SOLUTION: In the top plate 56 for a plasma processing apparatus which introduces microwaves radiated from the slot in a planar antenna member into a processing container, a plurality of recesses 92 are formed on the double circumference around the center of the top plate 56 on the surface thereof facing the interior of the processing container. The recesses 92 have inner microwave propagation control recesses 92A arranged along one circle at an equal angular interval, and outer microwave propagation control recesses 92B arranged along one circle. The number of the inner microwave propagation control recesses corresponds to the same number as that of the slots.
申请公布号 JP2013140959(A) 申请公布日期 2013.07.18
申请号 JP20120278327 申请日期 2012.12.20
申请人 TOKYO ELECTRON LTD 发明人 TIAN CAI ZHONG;NISHIZUKA TETSUYA;ISHIBASHI KIYOTAKA;NOZAWA TOSHIHISA
分类号 H01L21/31;C23C16/511;H01L21/3065;H05H1/46 主分类号 H01L21/31
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