| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing an In-Ga-Zn-based composite oxide sintered compact obtainable of a composite oxide sintered compact as an IGZO sintered compact in which the crystal of a compound expressed by InGaZnOis a main component.SOLUTION: The method for producing an In-Ga-Zn-based composite oxide sintered compact includes a mixing step of mixing and pulverizing powders of InO, GaO, and ZnO at a molar ratio of 1:1:1.01 to 1.1 to obtain a raw material powder, a calcining step of calcining the raw material powder at a predetermined temperature to obtain a calcined powder, a forming step of forming the calcined powder into a formed body having a predetermined dimension, and a firing step of firing the formed body at 1,500 to 1,600°C for four hours or more in a predetermined atmosphere to obtain a sintered compact, wherein the particle diameters of the raw material powder of InOand the raw material powder of GaOare 4 μm or less, and in the calcining step, the ZnO is removed and ZnGaOis generated. |
