MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING DEVICE, AND PROGRAM

摘要

PROBLEM TO BE SOLVED: To increase carbon concentration in a carbonitride film by improving productivity when the carbonitride film is deposited.SOLUTION: A manufacturing method for a semiconductor device includes a step of forming a film containing a prescribed element, nitrogen, and carbon on a substrate by alternately performing the following steps a prescribed number of times: supplying a material gas containing the prescribed element and a halogen element to the substrate; and supplying a reaction gas which is composed of three elements of carbon, nitrogen, and hydrogen to the substrate and in which the number of carbon atoms is greater than the number of nitrogen atoms in a composition formula.