| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a TiN film capable of suppressing strain of groove patterns when the film is used as a metal hard mask even if a film to be etched is low in a mechanical strength like a low-k film.SOLUTION: When forming a TiN film to be formed as a metal hard mask for etching a film formed on a substrate to be processed, a first step and a second step are repeated a plurality of times to form a TiN film having reduced film stress. In the first step (step 1), the substrate to be processed is conveyed into a processing container, TiClgas and a nitriding gas are fed into the processing container, the interior of which being kept in a depressurized state during this time, and a plasma from the gases is generated to form a unitary TiN film. In the second step (step 2), a nitriding gas is fed into the processing container, a plasma of the gas is generated, and the unitary TiN film is subjected to plasma nitriding. |
