| 摘要 |
PROBLEM TO BE SOLVED: To provide a power semiconductor device that is small in size, and high in reliability.SOLUTION: A power semiconductor device comprises: a control lead pattern 15 formed to a lead frame 10; a die pad 13 having a step to the control lead pattern 15 and to which power semiconductor elements 21 and 22 are bonded; and an interposer substrate 40 constituted of an insulation substrate 41, mounting a control element 23, and on one surface, having power wiring patterns 43a and 43b to be connected with surface electrodes of the power semiconductor elements 21 and 22 and a control wiring pattern 43c to be electrically connected with the control element 23. The power wiring patterns 43a and 43b are bonded to the surface electrodes of the power semiconductor elements 21 and 22. The control wiring pattern 15 is bonded to the control lead pattern 43c. An interval maintaining member for maintaining an interval between the die pad 13 and the interposer substrate 40 is disposed to at least a peripheral edge part of the die pad 13. |
