| 摘要 |
PROBLEM TO BE SOLVED: To increase a biaxial distortion in a base region of an HBT device, thereby increasing a carrier mobility in the base region.SOLUTION: The heterojunction bipolar transistor (HBT) offers high performance, and comprises a base region having a SiGe-containing layer therein. The SiGe-containing layer has a thickness of no more than 100 nm approximately, and has a predetermined critical germanium content. Further, the SiGe-containing layer has an average germanium content of no less than about 80% of the predetermined critical germanium content. The method for increasing the mobility of carriers in the HBT with a SiGe-containing base layer having a thickness of no more than 100 nm comprises the step of uniformly increasing the content of germanium in the base layer so that the inside average germanium content is no less than 80% of a critical germanium content calculated on the basis of the thickness of the base layer. |
