| 摘要 |
PROBLEM TO BE SOLVED: To facilitate setting of pulling conditions of single crystal silicon better adapted to characteristic of respective silica glass crucibles.SOLUTION: Measurement data for three-dimensional shapes of silica glass crucibles used by a user are acquired. Next simulation is carried out on incidence of crystal defects in case of conducting pulling of silicon single crystal by the Czochralski method using a silica glass crucible with three-dimensional shapes just the same as the measurement data, thereby pulling conditions, with which the rate of incidence of crystal defects becomes below the predetermined standard, are established. Subsequently, the pulling conditions, with which the rate of incidence of crystal defects becomes below the predetermined standard, are provided to the user. As a result, the user can easily set pulling conditions of single crystal silicon better adapted to characteristic of respective silica glass crucibles. |
