| 摘要 |
A method for producing an integrated optical device includes the steps of preparing a substrate including first and second regions; growing, on the substrate, a first stacked semiconductor layer including a first optical waveguiding layer, first and second cladding layers, and a first etch-stop layer between the first and second cladding layers; etching the first stacked semiconductor layer through a first etching mask formed on the first region; selectively growing, on the second region through the first etching mask, a second stacked semiconductor layer, third and fourth cladding layers, and a second etch-stop layer between the third and fourth cladding layers; and forming a ridge structure by etching the second and fourth cladding layers. The step of etching the first stacked semiconductor layer includes a step of forming a first overhang between the first and second cladding layers by selectively etching the first etch-stop layer by wet etching.
|
