| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME |
| 摘要 |
A method for manufacturing a semiconductor device, wherein a gate structure part (100) including a gate insulating film (11) and a gate electrode (12) is formed on a semiconductor layer (10), and a gate sidewall film (16) that is an insulating film including a metallic material is formed on the sidewall of the gate structure part (100). |
| 申请公布号 |
WO2013105550(A1) |
申请公布日期 |
2013.07.18 |
| 申请号 |
WO2013JP50116 |
申请日期 |
2013.01.08 |
| 申请人 |
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCEAND TECHNOLOGY |
发明人 |
ODA, MINORU;IRISAWA, TOSHIFUMI;TEZUKA, TSUTOMU |
| 分类号 |
H01L21/336;H01L29/78 |
主分类号 |
H01L21/336 |
| 代理机构 |
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