发明名称 |
LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREFOR |
摘要 |
Disclosed are a light emitting diode having an n-doped ohm contact buffer layer and a manufacturing method therefor. In the present invention, a highly n-doped ohm contact buffer layer with an electronic concentration up to 1 × 1018 cm-3 is formed on the n side of a light emitting epitaxy layer; when a growth substrate is removed, the n-type ohm contact buffer layer on the surface is exposed, which is a no-nitride polarity-face n-type GaN base material with a lower energy gap; an n-type ohm contact electrode is prepared on the n-type ohm contact buffer layer and follows the Ti/Al ohm contact electrode, which can overcome the problem of the existing vertical gallium nitride-based vertical light emitting diode that the voltage of the thin film GaN base light emitting device is unreliable because the ohm contact electrode on the nitride-face GaN base semiconductor layer is easy to crack due to temperature. |
申请公布号 |
WO2013104289(A1) |
申请公布日期 |
2013.07.18 |
申请号 |
WO2013CN70141 |
申请日期 |
2013.01.07 |
申请人 |
LIN, XIUCHENG |
发明人 |
YEH, MENG-HSIN;WU, JYH-CHIARNG;HUANG, SHAOHUA;CHOU, CHI-LUN |
分类号 |
H01L33/00;H01L33/12;H01L33/32 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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