| 摘要 |
<p>The invention relates to a light-emitting diode chip, comprising an n-type semiconductor layer (3), a p-type semiconductor layer (4), an active region (2) between the n-type semiconductor layer (3) and the p-type semiconductor layer (4), a lateral surface (14), which limits the n-type semiconductor layer (3), the p-type semiconductor layer (4) and the active region (2) in a lateral direction, and a doped region (1), in which a dopant is introduced into a semiconductor material of the light-emitting diode chip, and/or comprising a neutralised region (1), wherein the doped region (1) and/or the neutralised region (1) are formed at the lateral surface (14) at least in the region of the active region, and the light-emitting diode chip is intended to emit incoherent electromagnetic radiation during operation.</p> |
