HIGH-FREQUENCY POWER AMPLIFICATION ELEMENT, HIGH-FREQUENCY POWER AMPLIFIER, AND METHOD OF INSPECTING HIGH-FREQUENCY POWER AMPLIFIER

摘要

PROBLEM TO BE SOLVED: To provide a high-frequency power amplification element capable of detecting bonding failures with simple measurement means without using an optical detection device, and to provide a high-frequency power amplifier and a method of inspecting the high-frequency power amplifier.SOLUTION: A high-frequency power amplification element has: an Si substrate 106; epitaxial layers 104 and 105 formed on the Si substrate 106; a source electrode and a drain electrode contacting with the epitaxial layers 104 and 105; a gate electrode arranged between the source electrode and the drain electrode on the Si substrate 106; a diode electrode 107 forming Schottky junction with the epitaxial layer 104, and being different from the gate electrode; and a diode electrode 108 forming ohmic junction with the epitaxial layers 104 and 105.