METHOD, MEMORY CONTROLLER AND SYSTEM FOR READING DATA STORED IN FLASH MEMORY

摘要

An exemplary method for reading data stored in a flash memory is disclosed. The flash memory comprises a plurality of memory cells and stores N bit(s) data in a memory cell of the memory cells by programming the memory cell to one voltage state of 2N voltage states. The method includes: controlling the flash memory to perform at least one read operation upon the memory cell to obtain at least one binary digit for representing a bit of the N bits data; generating a codeword for representing the bit of the N bits data according to the at least one binary digit, wherein the codeword is different from the at least one binary digit; providing the codeword to an error correction decoder for performing an error correction operation.