发明名称 |
METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE |
摘要 |
A silicon carbide layer is thermally etched by supplying the silicon carbide layer with a process gas that can chemically react with silicon carbide, while heating the silicon carbide layer. With this thermal etching, a carbon film is formed on the silicon carbide layer. Heat treatment is provided to the silicon carbide layer to diffuse carbon from the carbon film into the silicon carbide layer.
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申请公布号 |
US2013183820(A1) |
申请公布日期 |
2013.07.18 |
申请号 |
US201213705930 |
申请日期 |
2012.12.05 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD.;NATIONAL UNIVERSITY CORPORATION NARA INSTITUTE OF;NATIONAL UNIVERSITY CORPORATION NARA INSTITUTE OFSCIENCE AND TECHNOLOGY;SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
HIYOSHI TORU;MASUDA TAKEYOSHI;HATAYAMA TOMOAKI |
分类号 |
H01L21/04 |
主分类号 |
H01L21/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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