SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: A semiconductor memory device is provided to prevent unnecessary current consumption by blocking a leakage current path formed at a local sense amplifier in a precharge mode. CONSTITUTION: A switching part (6) is connected between a local sense amplifier (3) and a bit line sense amplifier (7). The switching part is turned on in response to a disabled switching signal at a time when a predetermined section is passed after the first power supply is precharged. The first power supply is enabled by synchronizing with an enable signal activating the local sense amplifier and activates the bit line sense amplifier. [Reference numerals] (4) Power generator; (5) Switching signal generator