| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing an electrical capacity between a semiconductor substrate and a conductive through-via, in a semiconductor device in which the through-via is embedded in a through-hole of the semiconductor substrate via an insulating film.SOLUTION: According to one embodiment, there is provided a semiconductor device in which a thorough-via 32 obtained by filling a through-hole 30 formed to a p-type semiconductor substrate 11P with a conductive material via an insulating film 31 is formed. The semiconductor device has: an n-type well 13N provided at an upper part of the p-type semiconductor substrate 11P in the vicinity of the through-via 32; an electrode 22 connected to the n-type well 13N; and an electrode 23 connected with the p-type semiconductor substrate 11P in the vicinity of the electrode 22. |
