发明名称 |
Semiconductor Device and Method of Forming an Inductor on Polymer Matrix Composite Substrate |
摘要 |
A semiconductor device has a first insulating layer formed over a first surface of a polymer matrix composite substrate. A first conductive layer is formed over the first insulating layer. A second insulating layer is formed over the first insulating layer and first conductive layer. A second conductive layer is formed over the second insulating layer and first conductive layer. The second conductive layer is wound to exhibit inductive properties. A third conductive layer is formed between the first conductive layer and second conductive layer. A third insulating layer is formed over the second insulating layer and second conductive layer. A bump is formed over the second conductive layer. A fourth insulating layer can be formed over a second surface of the polymer matrix composite substrate. Alternatively, the fourth insulating layer can be formed over the first insulating layer prior to forming the first conductive layer. |
申请公布号 |
US2013181323(A9) |
申请公布日期 |
2013.07.18 |
申请号 |
US20100726880 |
申请日期 |
2010.03.18 |
申请人 |
LIN YAOJIAN;STATS CHIPPAC, LTD. |
发明人 |
LIN YAOJIAN |
分类号 |
H01L23/52;H01L21/768 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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