发明名称 |
THIN FILM SEMICONDUCTORS MADE THROUGH LOW TEMPERATURE PROCESS |
摘要 |
Embodiments disclosed herein relate to a TFT and methods for manufacture thereof. Specifically, the embodiments herein relate to methods for forming a semiconductor layer at a low temperature for use in a TFT. The semiconductor layer may be formed by depositing a nitride or oxynitride layer, such as zinc nitride or oxynitride, and then converting the nitride layer into an oxynitride layer with a different oxygen content. The oxynitride layer is formed by exposing the deposited nitride layer to a wet atmosphere at a temperature between about 85 degrees Celsius and about 150 degrees Celsius. The exposure temperature is lower than the typical deposition temperature used for forming the oxynitride layer directly or annealing, which may be performed at temperatures of about 400 degrees Celsius. |
申请公布号 |
WO2013106166(A1) |
申请公布日期 |
2013.07.18 |
申请号 |
WO2012US70071 |
申请日期 |
2012.12.17 |
申请人 |
APPLIED MATERIALS, INC.;YE, YAN |
发明人 |
YE, YAN |
分类号 |
H01L29/12;H01L21/20;H01L21/336;H01L29/786 |
主分类号 |
H01L29/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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