发明名称 |
METHOD OF GROWING NITRIDE SEMICONDUCTOR LAYER |
摘要 |
<p>A method of growing a nitride semiconductor layer may include preparing a substrate in a reactor, growing a first nitride semiconductor on the substrate at a first temperature, the first nitride semiconductor having a thermal expansion coefficient different from a thermal expansion coefficient of the substrate, and removing the substrate at a second temperature.</p> |
申请公布号 |
EP2615628(A1) |
申请公布日期 |
2013.07.17 |
申请号 |
EP20130150658 |
申请日期 |
2013.01.09 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD |
发明人 |
LEE, MOON-SANG;PARK, SUNG-SOO;PARK, YOUNG-SOO |
分类号 |
H01L21/20;H01L21/306 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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