| 摘要 |
PURPOSE: A light emitting diode is provided to reduce power consumption of a light emitting diode by forming an InXAlYGaZN(0<x<=1, 0<=y<=1, 0<=z<1) layer on a P-GaN layer. CONSTITUTION: An N-GaN layer(11) whose part is mesa-etched is formed on the top of a substrate(10). An active layer is formed on the top of the N-GaN layer. A P-GaN layer(13) is formed on an upper portion of the active layer. An InXAlYGaZN(0<x<=1, 0<=y<=1, 0<=z<1) layer(14) is formed on an upper portion of the P-GaN layer. An ohmic contact layer(15) is formed on an upper portion of the InXAlYGaZN layer. A reflecting layer is formed on an upper portion of the ohmic contact layer. An N-electrode is formed on an etched upper portion of the N-GaN layer and a P-electrode is formed on an upper portion of the ohmic contact layer. |
