FINFETS AND THE METHODS FOR FORMING THE SAME

摘要

PURPOSE: A FIN FIELD EFFECT TRANSISTER (FinFET) and a method of forming the FinFET are provided to have an extended channel width by forming a channel which includes a part of the sidewall of pin and a part of the top surface of pin. CONSTITUTION: Each middle part of two edge pin is etched. A gate dielectric (36) is formed on the sidewall of the middle part of the center pin. A gate electrode (38) is formed on the gate dielectric. Epitaxy is performed in order to form an epitaxy domain. A source/drain region is formed in the epitaxy domain.