发明名称 CURRENT DETECTION CIRCUIT
摘要 <p>There is provided a current detection circuit capable of preventing an excessive voltage from being applied to an input terminal of a differential amplifier, without resulting in reduction in current detection accuracy. The current detection circuit includes a power MOSFET 1 (a first semiconductor switching device), a sense MOSFET 2 (a second semiconductor switching device), a differential amplifier 3, a Zener diode 33 (a first voltage clamp device), a Zener diode 34 (a second voltage clamp device), an MOSFET 6 (a variable resistance device), a depletion type MOSFET 31 (a first MOSFET), and a depletion type MOSFET 32 (a second MOSFET).</p>
申请公布号 EP1953557(B1) 申请公布日期 2013.07.17
申请号 EP20060822111 申请日期 2006.10.24
申请人 RENESAS ELECTRONICS CORPORATION 发明人 SHIMADA, EIJI
分类号 G01R19/00 主分类号 G01R19/00
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