发明名称 MONOLITHIC MICROWAVE INTEGRATED CIRCUIT
摘要 <p>A monolithic microwave integrated circuit structure having a semiconductor substrate structure with a plurality of active devices and a microwave transmission line having an input section, an output section and a interconnecting section electrically interconnecting the active devices on one surface and a metal layer on an opposite surface overlaying the interconnection section and absent from overlaying at least one of the input section and the output section.</p>
申请公布号 EP2614524(A1) 申请公布日期 2013.07.17
申请号 EP20110758292 申请日期 2011.08.25
申请人 RAYTHEON COMPANY 发明人 REZA, SHAHED;SWIDERSKI, EDWARD;ALM, ROBERTO, W.
分类号 H01L23/66 主分类号 H01L23/66
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