发明名称 |
MONOLITHIC MICROWAVE INTEGRATED CIRCUIT |
摘要 |
<p>A monolithic microwave integrated circuit structure having a semiconductor substrate structure with a plurality of active devices and a microwave transmission line having an input section, an output section and a interconnecting section electrically interconnecting the active devices on one surface and a metal layer on an opposite surface overlaying the interconnection section and absent from overlaying at least one of the input section and the output section.</p> |
申请公布号 |
EP2614524(A1) |
申请公布日期 |
2013.07.17 |
申请号 |
EP20110758292 |
申请日期 |
2011.08.25 |
申请人 |
RAYTHEON COMPANY |
发明人 |
REZA, SHAHED;SWIDERSKI, EDWARD;ALM, ROBERTO, W. |
分类号 |
H01L23/66 |
主分类号 |
H01L23/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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