发明名称 Composite poly-silicon substrate and solar cell having the same
摘要 <p>A composite poly-silicon substrate for solar cell having a first substrate layer and a second substrate layer is disclosed. The purity of the first substrate layer ranges from 2N to 3N. The second substrate layer is formed on the first substrate layer, and the purity of the second substrate layer ranges from 6N to 9N.</p>
申请公布号 EP2615645(A1) 申请公布日期 2013.07.17
申请号 EP20120150571 申请日期 2012.01.10
申请人 INNOVATION & INFINITY GLOBAL CORP. 发明人 CHU, CHAO-CHIEH
分类号 H01L31/0392 主分类号 H01L31/0392
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