Trench-gate MISFET

摘要

A transistor (50) has an insulated control contact (61) within a trench (56). The transistor comprises a pair of semiconductor mesas (65) defining the trench, each semiconductor mesa of the pair of semiconductor mesas comprising at least one p-n junction. A drift layer (55) of a first conductivity type extends between the pair of semiconductor mesas and beneath the trench. A first doped well (77) of a second conductivity type extends from a first semiconductor mesa of the pair of semiconductor mesas to a depth within the drift layer that is greater than a depth of the trench. A source contact (60) is in direct contact with the first doped well.