发明名称 |
Semiconductor storage device |
摘要 |
According to one embodiment, a memory cell stores therein data. In a bit line, a potential changes according to write data to be written in the memory cell. A precharge circuit precharges the bit line. A precharge control circuit controls precharge of the bit line based on the potential of the bit line and the write data.
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申请公布号 |
US8488401(B2) |
申请公布日期 |
2013.07.16 |
申请号 |
US201113237562 |
申请日期 |
2011.09.20 |
申请人 |
SASAKI SHINICHI;KAWASUMI ATSUSHI;KABUSHIKI KAISHA TOSHIBA |
发明人 |
SASAKI SHINICHI;KAWASUMI ATSUSHI |
分类号 |
G11C7/06 |
主分类号 |
G11C7/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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