发明名称 Semiconductor storage device
摘要 According to one embodiment, a memory cell stores therein data. In a bit line, a potential changes according to write data to be written in the memory cell. A precharge circuit precharges the bit line. A precharge control circuit controls precharge of the bit line based on the potential of the bit line and the write data.
申请公布号 US8488401(B2) 申请公布日期 2013.07.16
申请号 US201113237562 申请日期 2011.09.20
申请人 SASAKI SHINICHI;KAWASUMI ATSUSHI;KABUSHIKI KAISHA TOSHIBA 发明人 SASAKI SHINICHI;KAWASUMI ATSUSHI
分类号 G11C7/06 主分类号 G11C7/06
代理机构 代理人
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