VERTICAL SEMICONDUCTOR DEVICE

摘要

PURPOSE: A vertical memory device is provided to prevent a metal residue by forming a common source line contact on a word line. CONSTITUTION: A ground selection line, a word line, and a string selection line are separately and successively laminated on a substrate. Channel rows are separated from a common source line and are arranged on the substrate in a first direction. The channel rows include a plurality of channels passing through the common source line, the word line, and the string selection line. At least one common source line contact (145) is formed on the substrate via the ground selection line, the word line, and the source selection line. The common source line contact is separated from the common source line. [Reference numerals] (AA) Second direction; (BB) First direction