Nonvolatile memory device and method of reading the same using different precharge voltages

摘要

A nonvolatile memory device includes a substrate, multiple doping regions, multiple cell strings and multiple page buffers. The doping regions extend in a first direction along the substrate and are spaced apart from one another in a second direction. The cell strings are provided according to a specific pattern between adjacent first and second doping regions among the multiple regions, each of the cell strings including multiple cell transistors stacked in a third direction perpendicular to the substrate. The page buffers are connected to the cell strings through bit lines, the page buffers being configured to provide precharge voltages to the bit lines during a read operation. Levels of the precharge voltages provided to the bit lines vary depending on distances between the cell strings and at least one of the first and second doping regions, respectively.