发明名称 Method of manufacturing semiconductor device having shared bit line structure
摘要 A semiconductor device, including a substrate having first and second active regions, the first and second active regions being disposed on opposite sides of an isolation structure, and a bit line electrically coupled to a contact plug that is on the isolation structure between the first active region and the second active region, and electrically coupled to an active bridge pattern directly contacting at least one of the first and second active regions, wherein the contact plug is electrically coupled to the first active region and the second active region, and a bottom surface of the active bridge pattern is below a top surface of the first and second active regions.
申请公布号 US8486802(B2) 申请公布日期 2013.07.16
申请号 US201113236751 申请日期 2011.09.20
申请人 JANG DONG-HOON;YOON YOUNG-BAE;KANG HEE-SOO;RAH YOUNG-SEOP;CHOE JEONG-DONG;SAMSUNG ELECTRONICS CO., LTD. 发明人 JANG DONG-HOON;YOON YOUNG-BAE;KANG HEE-SOO;RAH YOUNG-SEOP;CHOE JEONG-DONG
分类号 H01L21/762 主分类号 H01L21/762
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