发明名称 |
Phase change memory device having dielectric layer for isolating contact structure formed by growth, semiconductor device having the same, and methods for manufacturing the devices |
摘要 |
A phase change memory device includes a semiconductor substrate having an impurity region and an interlayer dielectric applying a tensile stress formed on the semiconductor substrate and having contact holes exposing the impurity region. Switching elements are formed in the contact holes; and sidewall spacers interposed between the switching elements and the interlayer dielectric and formed as a dielectric layer applying a compressive stress.
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申请公布号 |
US8486752(B2) |
申请公布日期 |
2013.07.16 |
申请号 |
US20100949275 |
申请日期 |
2010.11.18 |
申请人 |
CHANG HEON YONG;HYNIX SEMICONDUCTOR INC. |
发明人 |
CHANG HEON YONG |
分类号 |
H01L21/06 |
主分类号 |
H01L21/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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