发明名称 |
Film forming method of silicon oxide film, silicon oxide film, semiconductor device, and manufacturing method of semiconductor device |
摘要 |
A silicon compound gas, an oxidizing gas, and a rare gas are supplied into a chamber (2) of a plasma processing apparatus (1). A microwave is supplied into the chamber (2), and a silicon oxide film is formed on a target substrate with plasma generated by the microwave. A partial pressure ratio of the rare gas is 10% or more of a total gas pressure of the silicon compound gas, the oxidizing gas, and the rare gas, and an effective flow ratio of the silicon compound gas and the oxidizing gas (oxidizing gas/silicon compound gas) is not less than 3 but not more than 11.
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申请公布号 |
US8486792(B2) |
申请公布日期 |
2013.07.16 |
申请号 |
US20090992209 |
申请日期 |
2009.05.11 |
申请人 |
UEDA HIROKAZU;TANAKA YOSHINOBU;OHSAWA YUSUKE;NOZAWA TOSHIHISA;MATSUOKA TAKAAKI;TOKYO ELECTRON LIMITED |
发明人 |
UEDA HIROKAZU;TANAKA YOSHINOBU;OHSAWA YUSUKE;NOZAWA TOSHIHISA;MATSUOKA TAKAAKI |
分类号 |
H01L21/336;H01L21/302;H01L21/76 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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