发明名称 |
Focus ring heating method, plasma etching apparatus, and plasma etching method |
摘要 |
There are provided a method of heating a focus ring and a plasma etching apparatus, capable of simplifying a structure of a heating mechanism without a dummy substrate. The plasma etching apparatus includes a vacuum processing chamber; a lower electrode serving as a mounting table for mounting a substrate thereon; an upper electrode provided to face the lower electrode; a gas supply unit for supplying a processing gas; a high frequency power supply for supplying a high frequency power to the lower electrode to generate a plasma of the processing gas; and a focus ring provided on the lower electrode to surround a periphery of the substrate. In the plasma etching apparatus, the focus ring is heated by irradiating a heating light thereto from a light source provided outside the vacuum processing chamber.
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申请公布号 |
US8486221(B2) |
申请公布日期 |
2013.07.16 |
申请号 |
US20100700177 |
申请日期 |
2010.02.04 |
申请人 |
KOSHIMIZU CHISHIO;YAMAWAKU JUN;MATSUDO TATSUO;SAITO MASASHI;TOKYO ELECTRON LIMITED |
发明人 |
KOSHIMIZU CHISHIO;YAMAWAKU JUN;MATSUDO TATSUO;SAITO MASASHI |
分类号 |
C23F1/00;C23F1/08 |
主分类号 |
C23F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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