III GROUP METAL NITRIDE SEMICONDUCTOR HAVING A METAL-INJECTED GRAPHITE SUBSTRATE AND METHOD FABRICATING THEREOF

摘要

PURPOSE: A III group metal nitride semiconductor including a metal injected carbon substrate and a manufacturing method thereof are provided to improve crystallization by using the metal injected carbon substrate formed by injecting nonferrous metal to a porous carbon support element. CONSTITUTION: A III group metal nitride crystal layer is formed on a metal injected carbon substrate (10). The metal injected carbon substrate is made of 5 to 20 wt% of metal and 80 to 95 wt% of carbon. The metal is selected from nonferrous metal including Cu, Al, Zn, Sn, Au, Ag, and Ni. The metal injected carbon substrate is made of 15 wt% of Cu and 85 wt% of C. The metal injected carbon substrate is formed by injecting the nonferrous metal into a porous carbon support element.