| 摘要 |
A horizontal-type IGBT having a large current density, which is formed on a SOI substrate, has an emitter region, which is made up with two (2) or more of base-layers of a second conductivity-type on an oxide film groove, wherein the base-layers of the second conductivity-type in the emitter region are covered with a layer of a first conductivity-type, being high in the conductivity than a drift layer, and length of a gate electrode on the oxide film groove is reduced than the length of the gate electrode on the collector, and further the high-density layer of the first conductivity-type is formed below the base layer of the second conductivity-type on the collector, thereby achieving the high density of the layer of the first conductivity-type while maintaining an endurable voltage, and an increase of the current density.
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