发明名称 Thin film transistor and image display unit
摘要 One embodiment of the present invention is a thin film transistor having a substrate, a gate electrode formed on the substrate, a gate insulating film, a semiconductor layer formed on the gate insulating film, a protective film formed on the semiconductor layer and the gate insulating film and having first and second opening sections which are separately and directly formed on the semiconductor layer, a source electrode formed on the protective film and electrically connected to the semiconductor layer at the first opening section of the protective film, and a drain electrode formed on the protective film and electrically connected to the semiconductor layer at the second opening section of the protective film.
申请公布号 US8487308(B2) 申请公布日期 2013.07.16
申请号 US20100753781 申请日期 2010.04.02
申请人 IKEDA NORIAKI;MURATA KODAI;ITO MANABU;MIYAZAKI CHIHIRO;TOPPAN PRINTING CO., LTD. 发明人 IKEDA NORIAKI;MURATA KODAI;ITO MANABU;MIYAZAKI CHIHIRO
分类号 H01L23/04;H01L27/01;H01L27/12;H01L31/036;H01L31/0376 主分类号 H01L23/04
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