| 摘要 |
A semiconductor device includes a compound semiconductor layer provided over a substrate, a plurality of source electrodes and a plurality of drain electrodes provided over the compound semiconductor layer, a plurality of first vias each of which is configured to pass through the compound semiconductor layer and be coupled to a corresponding one of the plurality of source electrodes, a plurality of second vias each of which is configured to pass through the compound semiconductor layer and be coupled to a corresponding one of the plurality of drain electrodes, a common source wiring line configured to be coupled to the plurality of first vias and be buried in the substrate, and a common drain wiring line configured to be coupled to the plurality of second vias and be buried in the substrate. |
