发明名称 |
Doped electrode for dram applications |
摘要 |
A metal oxide first electrode layer for a MIM DRAM capacitor is formed wherein the first and/or second electrode layers contain one or more dopants up to a total doping concentration that will not prevent the electrode layers from crystallizing during a subsequent anneal step. One or more of the dopants has a work function greater than about 5.0 eV. One or more of the dopants has a resistivity less than about 1000 muOmega cm. Advantageously, the electrode layers are conductive molybdenum oxide.
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申请公布号 |
US8486780(B2) |
申请公布日期 |
2013.07.16 |
申请号 |
US201113219922 |
申请日期 |
2011.08.29 |
申请人 |
RUI XIANGXIN;ODE HIROYUKI;INTERMOLECULAR, INC.;ELPIDA MEMORY, INC. |
发明人 |
RUI XIANGXIN;ODE HIROYUKI |
分类号 |
H01L21/8242;H01L21/329 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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