发明名称 |
PROCESS FOR GRAPHENE BASED TRANSPARENT ELECTRODE WITH NO RESISTANCE CHANGE BY CURVATURE |
摘要 |
PURPOSE: A method for manufacturing a graphene-based transparent electrode without resistance variation due to a curvature is provided to utilize a largely synthesized graphene, thereby obtaining a transparent conductive thin film having an electric resistance which is almost not varied when the film is bent and a high optical transmittance. CONSTITUTION: A method for manufacturing a graphene-based transparent electrode includes: a step of injecting a vapor carbon source on a substrate at a temperature of 1000°C and at a pressure of 2.2Torr; a step of reacting the substrate with carbon from the source; a step of quickly cooling the carbon, which is reacted with the substrate, up to ambient temperature, and growing a graphene sheet (110) on the surface of the substrate; a step of etching the substrate having the sheet, and separating the sheet from the substrate; a step of moving the sheet in deionized water, and washing the sheet; and a step of transferring the sheet onto a polyethylene terephthalate (PET) transparent substrate (120). [Reference numerals] (110) Graphene sheet; (120) Transparent substrate; (AA) Etching; (BB) Ferric nitrate solution; (CC) Cleaning; (DD) Get-out-ion-water; (EE) Transfer
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申请公布号 |
KR20130081028(A) |
申请公布日期 |
2013.07.16 |
申请号 |
KR20120001978 |
申请日期 |
2012.01.06 |
申请人 |
INDUSTRIAL COOPERATION FOUNDATION CHONBUK NATIONAL UNIVERSITY |
发明人 |
LEE, BYUNG SOO;KWAK, BONG WON;KIM, HYUNG CHUL |
分类号 |
C23C16/44;H01G9/042;H01L21/205 |
主分类号 |
C23C16/44 |
代理机构 |
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