发明名称 Semiconductor constructions and methods of forming patterns
摘要 Some embodiments include methods of forming patterns. A semiconductor substrate is formed to comprise an electrically insulative material over a set of electrically conductive structures. An interconnect region is defined across the electrically conductive structures, and regions on opposing sides of the interconnect region are defined as secondary regions. A two-dimensional array of features is formed over the electrically insulative material. The two-dimensional array extends across the interconnect region and across the secondary regions. A pattern of the two-dimensional array is transferred through the electrically insulative material of the interconnect region to form contact openings that extend through the electrically insulative material and to the electrically conductive structures, and no portions of the two-dimensional array of the secondary regions is transferred into the electrically insulative material.
申请公布号 US8486611(B2) 申请公布日期 2013.07.16
申请号 US20100836495 申请日期 2010.07.14
申请人 MILLWARD DAN;JAIN KAVERI;ZHANG ZISHU;GOU LIJING;DE VILLIERS ANTON;ZHOU JIANMING;HE YUAN;HYATT MICHAEL;LIGHT SCOTT L.;MICRON TECHNOLOGY, INC. 发明人 MILLWARD DAN;JAIN KAVERI;ZHANG ZISHU;GOU LIJING;DE VILLIERS ANTON;ZHOU JIANMING;HE YUAN;HYATT MICHAEL;LIGHT SCOTT L.
分类号 G03F7/26 主分类号 G03F7/26
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