| 摘要 |
A method of manufacturing a semiconductor device includes forming a gate electrode material that covers a gate insulating film formed on each of side surfaces of first and second silicon pillars, wherein a film formation amount of the gate electrode material is controlled so that a first part with which the side surface of the first silicon pillar is covered via the gate insulating film does not contact with a second part with which the side surface of the second silicon pillar is covered via the gate insulating film. The method further includes: forming a mask insulating film that covers the first and second parts and fills a region between the first and second parts; and etching the gate electrode material using the mask insulating film as a mask, thereby forming gate electrodes with which the side surfaces of the first and second silicon pillars are covered via the gate insulating film, respectively and a conductive film electrically connecting the gate electrodes to each other.
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