发明名称 |
Semiconductor device and method of manufacturing the same |
摘要 |
A method of manufacturing a semiconductor device includes: forming a trench for forming buried type wires by etching a substrate; forming first and second oxidation layers on a bottom of the trench and a wall of the trench, respectively; removing a part of the first oxidation layer and the entire second oxidation layer; and forming the buried type wires on the wall of the trench by performing a silicide process on the wall of the trench from which the second oxidation layer is removed. As a result, the buried type wires are insulated from each other.
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申请公布号 |
US8486783(B2) |
申请公布日期 |
2013.07.16 |
申请号 |
US20100658520 |
申请日期 |
2010.02.11 |
申请人 |
SOHN WOONG-HEE;KIM BYUNG-HEE;KIM DAE-YONG;SONG MIN-SANG;CHOI GIL-HEYUN;MOON KWANG-JIN;KIM HYUN-SU;LEE JANG-HEE;JUNG EUN-JI;LEE EUN-OK;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SOHN WOONG-HEE;KIM BYUNG-HEE;KIM DAE-YONG;SONG MIN-SANG;CHOI GIL-HEYUN;MOON KWANG-JIN;KIM HYUN-SU;LEE JANG-HEE;JUNG EUN-JI;LEE EUN-OK |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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地址 |
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