| 摘要 |
PURPOSE: A system and method for controlling an ingot growing apparatus are provided to obtain a single crystal without defects by removing errors of an average control pulling speed and a target pulling speed. CONSTITUTION: A target value setting unit (200) sets a target temperature, a target pulling speed, and a target diameter according to the length of an ingot. A pulling speed control unit (300) controls the pulling speed of an ingot growing apparatus according to a correction pulling speed. A target pulling speed resetting unit (400) resets the target pulling speed by removing errors. A compensation signal generating unit (500) generates a compensation signal by comparing the reset target pulling speed with an average control pulling speed. A temperature control unit (600) controls the temperature of the ingot growing apparatus according to a compensation temperature. [Reference numerals] (210) Ingot length setting unit; (220) Target diameter setting unit; (230) Target pulling speed setting unit; (240) Target temperature setting unit; (320) Diameter controller; (410) First setting unit; (420) Second setting unit; (510) First generating unit; (530) Second generating unit; (630) Temperature controller; (640) Silicon, control rectifier
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