| 摘要 |
<p>PURPOSE: A power-up signal generating circuit is provided to prevent operation errors of a semiconductor memory device by preventing repower-up even in case that the level of internal voltage goes down in an active mode. CONSTITUTION: A drive selection signal generating unit (10) receives first to fourth bank active signals (BA<1:4>) and generates a drive selection signal (DRVS) enabled to a logic low level. A power-up signal generating unit (20) generates a power-up signal (PWRUP) by pulling up a first node with a first pull-up driving force or pulling down the first node with a first pull-down driving force according to the level of internal voltage (VINT) when the drive selection signal is in a logic high level. The power-up signal generating unit generates the power-up signal by pulling up the first node with a second pull-up driving force or pulling down the first node with a second pull-down driving force when the drive selection signal is in the logic low level. [Reference numerals] (10) Drive selection signal generating unit; (20) Power-up signal generating unit</p> |
