| 摘要 |
The present invention is a semiconductor structure for light emitting devices that can emit in the red to ultraviolet portion of the electromagnetic spectrum. The structure includes a first n-type cladding layer of Al x In y Ga 1-x-y N, where 0 ‰¤ x ‰¤ 1 and 0 ‰¤ y < 1 and (x+y) ‰¤ 1; a second n-type cladding layer of Al x In y Ga 1-x-y N, where 0 ‰¤ x ‰¤ 1 and 0 ‰¤ y <1 and (x + y) ‰¤ 1, wherein the second n-type cladding layer is further characterized by the substantial absence of magnesium; an active portion between the first and second cladding layers in the form of a multiple quantum well having a plurality of In x Ga 1-x N well layer where 0 < x < 1 separated by a corresponding plurality of Al x InyGa 1-x-y N barrier layers where 0 ‰¤ x ‰¤ 1 and 0 ‰¤ y ‰¤ 1; a p-type layer of a Group III nitride, wherein the second n-type cladding layer is positioned between the p-type layer and the multiple quantum well; and wherein the first and second n-type cladding layers have respective bandgaps that are each larger than the bandgap of the well layers. In preferred embodiments, a Group III nitride superlattice supports the multiple quantum well. |
