| 摘要 |
PURPOSE: A standard wafer and a producing method thereof are provided to obtain the standard wafer including metal impurities contaminated with low concentration in a bulk. CONSTITUTION: Contaminant solutions including metal impurities are generated (20). The contaminant solutions are stirred in a tub with potassium hydroxide aqueous solutions (22). A bottom wafer is immersed in the tub with the stirred contaminant solutions (24). The surface of the immersed bottom wafer is cleaned (26). The cleaned bottom wafer corresponds to a standard wafer including the metal impurities with uniform concentration in a bulk. [Reference numerals] (20) Contaminant solutions including metal impurities are generated; (22) Contaminant solutions are stirred in a tub with potassium hydroxide aqueous solutions; (24) Bottom wafer is immersed; (26) Surface of the immersed bottom wafer is cleaned; (AA) Start; (BB) Finish
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