SEMICONDUCTOR DEVICE

摘要

PURPOSE: A semiconductor device is provided to implement a 3D semiconductor device with high reliability by preventing the semiconductor device from being damaged. CONSTITUTION: A first separation pattern (90_1) and a second separation pattern (90_2) are formed on a substrate (1). A plurality of interlayer dielectric patterns (6a) and conductive patterns (66a) are formed on the surface of the substrate between the first and second separation patterns. A support pattern (25') passes through the conductive patterns and the interlayer dielectric patterns. A first vertical structure (50_1) passes through the conductive patterns and the interlayer dielectric patterns. A second vertical structure passes through the conductive patterns and the interlayer dielectric patterns.