RESISTIVE RANDOM ACCESS MEMORY DEVICE, SYSTEM HAVING THE MEMORY DEVICE AND METHOD FOR FABRICATING THE MEMORY DEVICE

摘要

PURPOSE: A resistive random access memory device, a system including the same, and a method for manufacturing the same are provided to easily implement a multilevel device by storing different data in two resistive memories according to a voltage difference between a word line and a bit line. CONSTITUTION: A bottom electrode (110) is arranged on a substrate (100). First and second resistive layers (131,132) are arranged on both sides of the bottom electrode. The first and second resistive layers show the change of resistance values in different voltages. A top electrode (155) is arranged on the first and second resistive layers. The top electrode is composed of a conductive pattern (140) and a bit line (150).