| 摘要 |
<p>The stack (4) has a first magnetic layer (1) formed of materials selected from a group such as cobalt, iron and nickel and magnetic alloys. A second magnetic layer (2) is formed of a metallic material providing a perpendicular anisotropy of interfacial origin to an assembly formed by the layers when the second layer has a shared interface with the first layer. A third magnetic layer (3) is deposited on the first layer. The second layer is deposited on the third layer that is constituted of a metallic material having miscibility less than 10 percent of the material of the first layer. The second layer is constituted of materials selected from the following group such as platinum, palladium, gold, iridium, molybdenum. The third layer is constituted of a material selected from the following group such as copper, silver, magnesium, aluminum. Independent claims are also included for the following: (1) a magnetic multilayer comprising an additional layer constituted of materials selected from boron, vanadium, chromium, zirconium, hafnium, platinum, and palladium (2) a memory cell.</p> |
