| 摘要 |
Provided are a non-chemically amplified photosensitive polymer having high resolution, excellent line edge roughness, process flexibility and dry etching resistance without chemical amplification reaction caused by acid diffusion under KrF (248nm), ArF (193nm), extreme ultraviolet lithography and E-BEAM as an exposing light source, and a monomer to synthesize the photosensitive polymer and a photoresist composition comprising the photosensitive polymer. The photosensitive polymer includes a monomer of the formula(1). In the formula(1), R* is hydrogen or methyl group and R is C1-3 mono-cyclic or multicyclic homo- or hetero-saturated carbohydrate. The photoresist composition includes 1 to 30 wt% of the photosensitive polymer and the balance of an organic solvent. The photoresist composition has a high resolution, excellent line edge roughness, process flexibility and dry etching resistance without chemical amplification reaction caused by acid diffusion in the photolithography using KrF (248nm), ArF (193nm), extreme ultraviolet lithography and E-BEAM as an exposing light source. |
