发明名称 |
ZENER DIODE IN A SIGE BICMOS PROCESS AND METHOD OF FABRICATING THE SAME |
摘要 |
A zener diode in a SiGe BiCMOS process is disclosed. An N-type region of the zener diode is formed in an active region and surrounded by an N-deep well. A pseudo buried layer is formed under each of the shallow trench field oxide regions on a corresponding side of the active region, and the N-type region is connected to the pseudo buried layers via the N-deep well. The N-type region has its electrode picked up by deep hole contacts. A P-type region of the zener diode is formed of a P-type ion implanted region in the active region. The P-type region is situated above and in contact with the N-type region, and has a doping concentration greater than that of the N-type region. The P-type region has its electrode picked up by metal contact. A method of fabricating zener diode in a SiGe BiCMOS process is also disclosed.
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申请公布号 |
US2013175581(A1) |
申请公布日期 |
2013.07.11 |
申请号 |
US201313734464 |
申请日期 |
2013.01.04 |
申请人 |
SHANGHAI HUA HONG NEC ELECTRONICS CO., LTD.;SHANGHAI HUA HONG NEC ELECTRONICS CO., LTD. |
发明人 |
LIU DONGHUA;HU JUN;DUAN WENTING;QIAN WENSHENG;SHI JING |
分类号 |
H01L21/82;H01L27/04 |
主分类号 |
H01L21/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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